| 摘要 |
PURPOSE:To ensure to make an aperture of an insulated film by a method wherein a negative-type resist film on a back face of a substrate and after application thereof, the resist on the surface and the back face of the substrate is developed, then a resist-mask for aperture of an insulated film is formed on the surface of the substrate. CONSTITUTION:The first insulated film 20 on one side face of a substrate 1 and the second insulated film 21 on another side face of substrate 1 are formed at the same time by means of thermal oxidation. The first negative-type resist 30 is applied on the insulated film 21 by a spinner. The resist 31 is made to apply at whole face performing curing of whole face. The substrate 10 is dipped into developer, a resist 30 not cured yet and the second negative-type resist 31 creeping around the surface side of the substrate 10 are removed. The aperture of the first insulated film 20 is made by etching while the resist 30, 31 are designated as the resist-mask. |
