| 摘要 |
PURPOSE:To regulate substantial gate length in narrow width by selectively forming a mask layer on a substrate, executing selective vapor phase growth and utilizing the formation of a semiconductor layer intruding onto the mask layer and the remaining of a cavity. CONSTITUTION:A mask 2 is formed on a GaAs substrate 1 in a striped manner. A GaAs first compound semiconductor layer 3 to which an n type impurity is doped is grown, and a narrow space (d) is maintained at the center of the mask layer 2. A GaAs second compound semiconductor layer 5 having high resistance to which the impurity if not doped is shaped in a cavity 4 on the semiconductor layer 3. A gate-length regulating region 15 having narrow width (d) is formed through etching. An operating region 16 for a gate section is constituted on the semiconductor layer 3. A Schottky gate electrode 7 is shaped in the cavity 4, and each of the source and drain electrode 8 and 9 is applied on both sides in an ohmic manner. |
