| 摘要 |
PURPOSE:To prevent the generation of the remaining etching of 'permalloy(R)', by applying twice to a interlayer insulation film between a conductor layer and a permalloy layer to made a resin layer 2-layer, and injecting the ions of He, Ne, etc. only into the resin layer of lower side. CONSTITUTION:A SiO2 film 11 is formed on a bubble crystal, TaMo/Au/TaMo is vapordeposited on it, a conductance film 12 is formed, and a conductance- pattern 13 is formed by employing a photoresist. After a ladder type resin is applied, thermally hardened and forms a resin film 14 of lower layer, an N<+> ion 15 is injected. Then, a ladder silicon resin film 16 is formed again, and a resist pattern 17 is formed on it. The etching part of the resin films 14 and 16 are removed by the ion etching. Since the etching rate of the resin film 14 is made low by the ion injection a step difference section 18 sloped gradually. A protection film of SiO2 is formed, and a magnetic bubble memory element is obtained.
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