发明名称 MAGNETIC BUBBLE MEMORY DEVICE
摘要 PURPOSE:To make the trapping force of a bubble optimum and the operating margin of the driving magnetic field excellet by forming an ion injection area projection section in the form of V or U of the depth of the specified opening in an ion injection pattern in the connection between an ion injection transmission pattern and a permalloy transmission pattern. CONSTITUTION:In the contact section between an ion injection transmission channel 11 and the permalloy transmission channel 13, a projection section is formed toward the transmission channel 13 to an ion injection lyaer 15, its form is made to an inversed V or an inversed U, its inlet opening EH is formed 1-2 times the bubble diameter, and the depth Q1-3.5 times the bubble diameter. Since a magnetic bubble 20 moves along with the periphery in the transmission channel and in the transmission channel 13 it moves along with the internal flange, by roughly making the spacing between the sides EF and ZW of a triangle EFH equal to the bubble diameter, a bubble 20 is perfectly fit between both sides EF and WF, and the trapping force goes to optimum, and the operating force in the driving magnetic field is made excellent.
申请公布号 JPS61190777(A) 申请公布日期 1986.08.25
申请号 JP19850030167 申请日期 1985.02.20
申请人 FUJITSU LTD 发明人 SATO YOSHIO;OHASHI MAKOTO;MIYASHITA TSUTOMU
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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