| 摘要 |
PURPOSE:To etch a surface without giving damage to the substrate by a method wherein reaction seeds activated by projection are subjected to contact with the surface of the substrate in the state that the surface of the substrate is covered with ion sheath. CONSTITUTION:High frequency discharge is generated in a chamber 1 by high frequency electric field lying between electrodes 4 and 5, and an Si substrate 2 is covered round with an ion sheath having surplus electrons. This situated, ultraviolet rays are projected from an ultraviolet ray source 7 to the substrate 2, and Cl2 gas is introduced into the chamber 1. Just then, radical of Cl*2 (or Cl*) is created and the radical is adsorbed in the substrate 2 and becomes Cl<-> accepting supply of electrons from the ion sheath, then etching is performed reacting with Si of the substrate 2. Thereby, etching is performed on the surface of the substrate 2 without giving damage. |
