| 摘要 |
PURPOSE:To shorten turn-OFF time, by bonding a semiconductor layer showing the same conducting type and a semiconductor layer showing the different conducting type as a unitary body, forming a semiconductor substrate, and forming a conductivity modulation type semiconductor device. CONSTITUTION:A high concentration layer 12 of a second semiconductor layer is arranged in the neighborhood of a first semiconductor layer 11 having a one conducting type. Thus, a semiconductor substrate is formed. A reverse conducting type region 15 is formed in a one-conducting type region 14. A part of one surface of the semiconductor substrate is coated by an insulating layer 19. A gate layer 17 is embedded in the insulating layer 19. At this time a junction layer 32 is formed between the semiconductor layer 11 and the high concentration layer 12. Thus, the turn-OFF time can be shortened by about 1/5 in comparison with a conventional conductivity modulation type semiconductor device.
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