| 摘要 |
PURPOSE:To prevent the characteristics of a semiconductor element from deteriorating due to a reduction in the film quality of the film to be formed on the element by a method wherein the high-frequency power; which is impressed between the upper and lower electrodes from the high-frequency power source that is connected to the side of the electrode, whereon the matter to be treated is placed, through the block capacitor; is controlled on the basis of the value of the self-bias to generate between the upper and lower electrodes. CONSTITUTION:A wafer 2, which is placed on a cathode 3, is subjected to a chemical, that is, isotropic etching action due to the positive ions of the etching gas in an atmosphere of plasma, which is formed by high-frequency power that is impressed between the cathode 3 and an anode 4, and at the same time, the wafer 2 is subjected to a non-isotropic etching action due to a sputtering phenomenon, which is caused by the positive ions of the etching gas that is accelerated so as to collide with the surface of the wafer 2 at the electrical field to be formed by the self-bias to generate between the cathode 3 and the anode 4 as well. In this case, as the value of the self-bias can be adjusted to the prescribed value, a good etching result can be obtained. |
