| 摘要 |
PURPOSE:To improve the characteristics of a film, the speed of forming a film, etc. and to homogenize quality by introducing an active seed obtained from a compound containing carbon and a halogen and an active seed obtained from a raw material gas for forming a film in a film forming space and by giving heat energy. CONSTITUTION:A substrate 103 is placed on the susceptor 102 in a film forming chamber 101 and heated by a heater 104. H2 gas is introduced in an activation chamber B123 from a gas supply cylinder 106, activated by a microwave plasma generation equipment 122 and an active seed B is formed. Whereas, an activation chamber A112 is filled with solid C grain 114, heated in an electric furnace 113 and an active seed A of CF*2 is formed by blowing CF4. These active seeds A, B are introduced in the film forming chamber 101 and heat is given from a heat energy generation equipment 117. Consequently, the active seeds A, B mutually react chemically and a film is deposited on the substrate 103. |
