| 摘要 |
PURPOSE:To contrive the uniformity of deposited film quality by the chemical reaction in a film forming chamber separately introduced with an active seed formed by the decomposition of a compound containing silicon and a halogen and an active seed formed from a compound containing silicon. CONSTITUTION:The pressure in a film forming chamber 101 is reduced using an exhaust equipment (not shown in the drawing) after a substrate 103 is placed on a susceptor 102. Then, Si5H10 gas or a mixed gas of Si5H10 gas and PH3 gas or B2H6 gas is introduced in an activation chamber B123 from a gas supply cylinder 106, activated with a microwave plasma generation equipment 122 and introduced in the film forming chamber 101. Whereas, an activation chamber A112 is filled with Si grain 114, heated in an electric furnace 113, an active seed is formed blowing SiF4 from a pipe 115 and introduced in the film forming chamber 101. This enables forming a uniform amorphous deposited film on the substrate 103. |
