| 摘要 |
PURPOSE:To enable to form high-precision desired (resist) patterns having a good dry etching resistance by a method wherein a fine pattern forming method is used. CONSTITUTION:A polymethyl methacrylate film is applied on the substrate to be treated, whereon an aluminum film A is formed, as a resist having a high resolving power and a slightly weak dry etching resistance. Then, a pattern is drawn using an electron beam drawing device and a developing is performed. Whereby inversion resist patterns 12 are formed. Successively, a coated layer 13, which is superior to the inversion resist patterns 12 in a dry etching resistance, is applied, a baking treatment is performed and the surface of the coated layer 13 is flattened. Then, a dry etching is performed and the surface layer of the coated layer 13 and the inversion resist patterns 12 are removed by performing an etching, thereby obtaining resist patterns 13'. Lastly, parts of the aluminum film A on the surface of the substrate are selectively removed using the resist patterns 13 as masks, thereby enabling to obtain the very high- precision desired aluminum patterns A'. |
