| 摘要 |
PURPOSE:To suppress the intrusion of a channel stopper region into an active region, by selectively making a CVD oxide film to remain at the peripheral part of an oxidation resisting mask layer. CONSTITUTION:On a semiconductor substrate 1, a silicon oxide film 3 and an oxidation resisting mask layer 2 are formed. The layer 2 is etched, and a part, which is to become an isolating region 5, is exposed. The substrate 1 is etched, and the entire region 5 is recessed. Then, a CVD film 6 is deposited on the entire surface of the layer 2 and the region 5. Thereafter, reactive ion etching of the film 6 is performed, and only the part neighboring the layer 2 is made to remain. With the layer 2 and the film 6 as masks, ions are implanted, and an ion implanted layer 7 is formed in a range narrower than the region 5. The surface of the substrate 1 is oxidized by using the layer 2, and a thick field oxide film 8 is formed in the region 5. A channel stopper region 9 is formed beneath the film 8 at the same time. |
