| 摘要 |
PURPOSE:To reduce power consumption by using an enhancement type for a field effect transistor (TR) of the input section of a source follower circuit in a device comprising an inverter circuit consisting of an inverter circuit or an FF circuit and a source follower. CONSTITUTION:Enhancement type is used for Schottky gate type field effect TRs FET 33, 34 of the input section of the source follower circuit. When each signal of H and L level is fed to input terminals 44, 45, respectively, the FETs 31 and 32 are turned on and off respectively and the potential of a point 50 rises up to the power voltage. Since the enhancement FET 34 is used, a current flows between the gate and source, a potential at a point 51 is lowered than the level of power voltage, and the FET is acted in the saturated region. Thus, it is not required to provide a diode between the terminals 43 and 52 so as to reduce the power voltage. As a result, the power consumption is reduced.
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