| 摘要 |
PURPOSE:To increase the density of an integrated circuit by separating a plurality of element forming regions from a single recrystallizing region. CONSTITUTION:A large-sized silicon island 2c is recrystallized through the same method as conventional devices. Two element regions 4a, 4b are separated from the inside of the island 2c. A space is unnecessitated between both regions 4a, 4b at that time. A space between an inverter 20 and an inverter 30 can be brought close to one limited by wiring width, thus attaining an improvement in the degree of integration. However, the size of the silicon island 2c cannot be increased without limitation. It is because a difference between the thermal expansion coefficients of quartz and silicon is large and the silicon island is cracked after cooling. A limitation on which no crack is formed extends over approximately 200X200mum<2> when silicon is 0.5mum thick. Both inverters may be connected while using the silicon island in approximately said size as a maximum unit. |
