| 摘要 |
PURPOSE:To improve a yield rate, to reduce a cost and to make an area large readily, by forming a gate electrode and a semiconductor thin film in the approximately same plane shape as that of the gate electrode. CONSTITUTION:A gate electrode 2 of a conducting film is formed no a transparent insulating film substrate 1. A gate insulating film 3 is formed on the electrode 2. A semiconductor thin film 7 is formed on the insulating film 3. A source electrode 5 and a drain electrode 6 are formed at separated positions on the thin film 7. At this time, the gate electrode 2 and a thin film 4 are formed in the approximately same island shaped region including the extended part of the gate electrode. The end of a part of a transparent conducting film 8 approximately agrees with the end of a part of the thin film 7. Thus,the yield rate is improved, the cost is reduced and the large area can be readily obtained. |
