| 摘要 |
PURPOSE:To obtain a uniform single crystal layer without damaging a lower semiconductor layer by forming the single crystal layer forming a melted region irradiating an accelerated ion on an amorphous or a polycrystalline semiconductor thin film and by recrystallizing the melted region. CONSTITUTION:An ion beam 2 is irradiated in stripes on the surface of a substrate 1 formed with an amorphous or a polycrystalline Si layer on an oxide film and the amorphous or the polycrystalline Si layer of an irradiated part 3 is melted. Under these conditions, if the substrate 1 is moved to the direction shown by an arrow 5, the melted region is moved to a new amorphous or polycrystalline Si layer A according to the movement of the irradiation, meanwhile, the previous melted region is recrystallized in accordance with cooling to single crystal and is changed to a single crystal layer B. This enables forming a greater area single crystal layer without damaging an element formed on a base semiconductor or a base. |
