| 摘要 |
PURPOSE:To enable to form a uniform film on wafers by a method wherein process gas is uniformly fed in the process tube. CONSTITUTION:The group of through-holes 10 of a process tube 4 is provided in such a way that the through-holes on parts of the process tube 4, where are located near the intake vent 5 of a box 3, are formed of those of smaller diameters and the penetrated holes on parts of the process tube 4, where are located near the exhaust vents 9 of a substrate 2, are formed of those of larger diameters. For that, process gas 16a of a strong concentration in immediately after being introduced in a processing chamber 7 is made to flow in the processing chamber 7 through the through-holes 10a having the smaller caliber, while process gas 16b of a diluted concentration is made to flow in the processing chamber 7 through through-holes 10b having larger diameters. The relative concentration of process gas 16, which is made to flow in the processing chamber 7 in such a way, is held to a constant owing to the difference between the calibers due to the positions of the through-holes 10. Furthermore, as wafers 14, which are the matters to be processed, are being made to revolve in the interior of the processing chamber 7, the process gas 16 is made to uniformly flow on the wafers 14 and even though some among the wafers 14 are ones being held at whatever positions on a jig 15, a uniform film is formed on such wafers. |
