| 摘要 |
PURPOSE:To increase an ion current, by providing an ion convergence mechanism between the ion analysis mechanism and slit of an ion implanter so that a plurality of element ions separated by the ion analysis mechanism and coming out of it are caused to converge. CONSTITUTION:Ions emitted from an ion source 1 and comprising desired and undesired ions are separated to different outgoing positions by an ion analysis mechanism 2 depending on the atomic weights of the ions, so that only the desired ions are implanted into a semiconductor wafer W through an ion convergence mechanism 4 and a slit 3. The ion convergence mechanism 4 comprises an electromagnet 41, triangular polar surfaces 42 and an excitation coil 43. The ions of boron with atomic weights of 10 and 11 or of the like, which mutually adjacently come out of the analysis mechanism 2, are caused to converge to be simultaneously implanted into the wafer W. The ion current can thus be increased to enhance the efficiency of ion implantation work.
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