| 摘要 |
<p>PURPOSE:To remove defects, in which a connecting section in a semiconductor element is cracked, strain is left in the semiconductor element and section except the connecting section are deteriorated, by previously preheating a projecting electrode before pressing and pressing the semiconductor element at a specific temperature. CONSTITUTION:A pressing section 1, a copper lead frame 4 and a semiconductor element 3 are held for 1sec at 200 deg.C as a temperature where an Au-Sn eutectic alloy is not melted, the pressing section 1 is pushed down, and the temperature of the pressing section 1 is held for 0.5sec at 300 deg.C as a temperature where the gold-tin alloy is melted completely by flowing currents through the pressing section, thus manufacturing the gold-tin alloy 7 by a tin plating 5 on the lead frame 4 and a gold projecting electrode 6 for the semiconductor element 3. The gold-tin alloy 7 completely solidifies as it is left as it is pressed by lowering the temperature of the pressing section of 1.5sec up to 200 deg.C, the semiconductor element 3 and the lead frame 4 are connected, and pressure is removed by lifting the pressing section and the semiconductor element is cooled up to the normal temperature.</p> |
