| 摘要 |
PURPOSE:To control more uniformly the temperature distribution in a region of reaction system of a vapor growth equipment, by providing a heating means also within the reaction system in addition to the outside of the reaction system. CONSTITUTION:In an epitaxial growth region, a growing substrate 9 carried on a wafer holder 8' is disposed within a liner tube 7 and heated by an external heating means, resistance furnace. A secondary heater 12 is incorporated within the holder 8'. By changing the shape and the exothermic distribution of this secondary heater 12 according to a temperature distribution that the growing unit inherently has, to growing conditions, and especially to a flow rate of a material gas, the temperature distribution is compensated and uniformized. This heater 12 is connected to a temperature control unit through an electrode taking-out orifice 13. |
