| 摘要 |
PURPOSE:To obtain the titled device prevented from latch-up with simple construction, by a method wherein a resistor is formed out of an N-type semiconductor region, in this device whose output transistor is an open collector. CONSTITUTION:An NPN type output transistor 6 is constructed by making an island region 38a as the collector, a P-type diffused region 39 as the base, and an N<+> type diffused region 40a as the emitter, and an adjacent island region 38b is provided with a resistor R3 using the diffused resistor of an N<+> type diffused region 40c. An emitter electrode 42 is biased to the diffused region 40a, an isolation region 37, and the substrate 35 at the ground potential GND via outer terminal 11e, and an electrode 45 to one end of the diffused region 40c at relatively high potential via output terminal 11b. This structure allows no formation of parasitic thyristors because of the absence of a P-type diffused region 19b even when the output transistor 6 and the resistor R3 are arranged in proximity, and therefore does not fall into latch-up. |
