| 摘要 |
PURPOSE:To form easily a thin transparent In2O3 film having low to high resistance by activating the gaseous oxygen introduced into a vacuum vessel by glow discharge, heating an In vapor deposition source to evaporate and depositing the vapor thereof by evaporation on a substrate. CONSTITUTION:The atmosphere of the gaseous oxygen introduced through an introducing hole 6 into a vacuum chamber 1 the inside of which is evacuated to a vacuum through a discharge port 9 is maintained under about 1X10<-4>-1X10<-2>Torr pressure. A high frequency is oscillated from an antenna 4 by a high-frequency power source to generate high-frequency glow discharge. An electron beam 7 is impressed to an In2O3 tablet 8 to heat the tablet and to evaporate In from the surface thereof. The evaporated In and the gaseous oxygen activated by the glow discharge are thereby brought into reaction with each other and the thin transparent In2O3 film is formed and stuck on the substrate 3 maintained at a prescribed temp. by a sheathed heater 2. The formation of the thin In2O3 to about 10<-3>-10<8>OMEGAcm is made possible by changing adequately the distance X between the substrate 3 and the antenna 4 and the high-frequency electric power to be impressed to the antenna 4. |
