| 摘要 |
PURPOSE:To prevent the deposition of semiconductor atoms on a quartz plate by impressing bias voltage on the substrate. CONSTITUTION:Forming a reaction chamber 1 out of conductor and using a mercury vapor lamp for a light source 3 and disilane for the reaction gas, the positive and negative output terminals of a bias power source 5 are connected to the reaction chamber 1 and a substrate 4, and a negative bias voltage is impressed on the substrate 4. At this time, because of bias voltage impressing on the substrate 4, ionized Si atoms generated by the decomposition of reaction gas with ultraviolet energy are adsorbed to the substrate 4, and the deposition of an Si film on a quartz plate 2 is prevented. The above-mentioned semiconductor atoms deposit on the quartz plate 2, and this enables the increase in film- forming speed of the amorphous semiconductor film over the substrate. |
