| 摘要 |
PURPOSE:To obtain the titled apparatus which improves the product yield with little generation of scratches and defects in the wafer surface, by a system wherein semiconductor wafers are all transported onto heating tables by automatic carriage. CONSTITUTION:When a semiconductor wafer 50 is carried onto a heating table 10 by carrier belts 70, 71, then a vacuum chuck receives it by adsorption and places it on a disk susceptor 20. A dispersion head 80 is provided at the position opposed to the surface of the semiconductor wafer 50 located on the susceptor 20 and sprays the mixed gas, supplied from a doping device 90, to the surface of the wafer 50, and the first layer CVD film is formed by adhesion through vapor phase growth. Next, the wafer is carried onto a heating table 11 by a carrier belt 72, and the second layer CVD film is formed by a head 81. Thereafter, it is likewise carried onto a heating head 12, and the third CVD film is adhered, and the wafer is carried by carrier belts 74, 75 to an unloader 61 and stored there when the growth of CVD films are finished. |
