| 摘要 |
PURPOSE:To form a compound semiconductor layer having reduced distortion in lattices, by providing, between the Si substrate and the compound semiconductor layer, a buffer layer constructed so as to absorb any distortion in lattices due to a difference in thermal expansion coefficient between those layers. CONSTITUTION:A buffer layer 2 is formed on an Si substrate 1, and a GaAs single crystal layer 3 is formed on the buffer layer 2. The buffer layer 2 is composed of a pair of double structures, each consisting of a first sublayer of amorphous or polycrystalline Ge and of a second sublayer of single crystal Ge, for example. The GaAs single crystal layer 3 may be substituted with a layer of a binary compound such as GaP or InP or of a ternary compound such as GaAlAs, InGaP or GaAsP or of a multicomponent compound such as InGaAsP. |
