| 摘要 |
PURPOSE:To form wirings of Al including Si by forming an intermetallic compound of Al and metal through reaction of Al metal silicide by the heat processing after formation of Al film mixing a metal silicide and simultaneously dispersing Si in the metal silicide into Al. CONSTITUTION:After an impurity diffused layer 12 is formed into a semiconductor substrate Si 11, an insulation film 13 is covered, an insulation film 13 on the impurity diffused layer 12 is removed and then a contact hole 14 is provided. Thereafter, Al wiring layer 15 is formed. In this case, paradium silicide 16 is mixed to the Al film 15. After forming a wring layer of Al and paradium silicide, the heat processing is carried out for certainly defining the contact hole and thereby an intermetallic compound 17 of paradium and Al is produced and Si 19 is released. In this case, since the intermetallic compound 17 is formed along the crystal grain boundary 18, it becomes a barrier for diffusion in the Al film of Si and prevents growth of gigantic Si grain due to precipitation of Si. Thereby, defect by increase of contact resistance and wiring resistance can be prevented and simultaneously reaction can be generated sufficiently in the sintering process at 450 deg.C. |
