| 摘要 |
PURPOSE:To obtain through holes and contact holes reasonably from the point of view of coverage by forming an interlayer film with bias sputter and continuously changing a substrate bias. CONSTITUTION:A film which is not easily etched is formed at first by executing the sputtering through increase of substrate bias. Thereafter, the substrate bias is gradually decreased and sputtering is carried out. Thereby, the film is changed gradually to be etched easily and thereby a film which is easily etched is formed at the upper side. Accordingly, high quality tapered etching can be carried out even in case the wet etching is carried out with the resist 4 obtained by cutting a miniature pattern used as the mask, and moreover an effectively thin area can be eliminated. Moreover, even in case the resist 4 is removed and the Al wiring 3 is formed, wiring can be done with good coverage and the region having bad coverage is eliminated. |
