| 摘要 |
PURPOSE:To form wirings of high reliability by forming a double layer made of polysilicon of lower layer and metal of upper layer to become a wiring layer on a substrate, and patterning the metal by an isotropic etching and polysilicon an anisotropic etching. CONSTITUTION:A substrate 4 in which a contacting hole is opened is prepared at the desired position. Then, a double layer made of polysilicon of lower layer 5b and aluminum or aluminum alloy of upper layer 5a to become a wiring layer 5 is formed on the substrate 4. A patterning for wiring is then performed, the aluminum or aluminum alloy of the layer 5a not placed with a photoresist film is then isotropically etched by phosphoric acid, and the polysilicon of layer 5a of the position not placed with a photoresist film is anisotropically etched. Thereafter, the photoresist film is removed, and after the patterning is finished, a protective insulating film 3 is formed by a CVD method and the like. |
