| 摘要 |
PURPOSE:To form a resist pattern high in resolution and easily removable after processing by using a siloxane type polymer high in sensitivity to UV rays and glass transition point and oxigen plasma resistance, and a specified compd. as the upper layer of two-layer type resist layers. CONSTITUTION:A substrate is coated with the lower resist layer of a dry etching-resistant org. polymer resist, and the lower resist layer is coated with the upper resist layer contg. the siloxane polymer high in sensitivity, glass transition point, and oxygen plasma resistance, and represented by formula I or II, (X being a photopolymerizable group, such as formula III, and l, m, n are each 0 or a positive interger, but l and n are not simultaneously 0), and the compd. represented by formula IV in which R4 is absent or -CH2-, -0-, -N=N-, and R2 is H or halogen. The upper resist is exposed to UV rays through a photomask, and developed, and then, the lower layer is etched off with oxygen plasma to transfer the upper resist pattern to the lower resist, thus permitting a pattern high in resolution to be formed on the substrate and to be used for fabrication of the paterns of semiconductor elements, etc.. |
