| 摘要 |
PURPOSE:To contrive the improvement of characteristics by reducing the surface recombination current or the surface tunnel current by forming the protective film consisting of Cd1-yZnyTe (or CdSzTe1-z) which has been lattice-matched to the crystal of Hg1-xCdxTe in order to protect the surface of the crystal substrate (or a crystal layer) of Hg1-xCdxTe. CONSTITUTION:A Cd1-yZnyTe protective film 2 is formed to about 0.5mum thick and a photoresist film 3 comprising an opening 3A is formed on an N-type impurity diffusion region forming part. By ion implantation of boron, an N-type impurity diffusion region 4 is formed. A protective film 5 consisting of ZnS is formed to about 1mum thick and as this protective film consisting of ZnS supplements a thickness of the film 2, it might be formed on demand. By patterning the ZnS protective film 5 and the Cd1-yZnyTe protective film 2, an electrode contact window is formed. On the surface, an N-side ohmic contact electrode 6 is formed by patterning after forming an In film and on the backside, a P-side ohmic contact electrode 7 is formed after forming an Au film on the overall surface. |
