| 摘要 |
PURPOSE:To highly integrate a circuit by utilizing recesses of an irregular surface produced in case of forming an insulating layer as new wiring region. CONSTITUTION:Aluminum of the first layer metal wirings 2 is formed on a semiconductor substrate 1, and a CVD-SiO2 film of an insulating film 3 is coated thereon. In this case, the upper portion of the portion between two adjacent first layer metal wirings 2 is recessed as compared with the upper portion coated with the wirings 2. Aluminum of the first and fifth layer metal wirings 4 is coated in the recess, aluminum of the second layer metal wirings 5 is coated on the projection of the upper portion of the wirings 2, and a CVD-SiO2 film of an insulating film 6 is coated thereon. When the first, fifth layer wirings 4 and the first layer wirings 2 or the second layer wirings 5 are separated therebetween only at a distance of the degree that they are electrically interfered, the thickness of the insulating film is increased or the interval of the first and second adjacent wirings is increased. |
