| 摘要 |
PURPOSE:To reduce the collector capacity and to improve the switching speed of a semiconductor device by constructing to lead base and contacting electrodes from base and collector contacting region and layer, respectively. CONSTITUTION:An N<+> type GaAs collector contacting layer 12, an N-type GaAs collector layer 13, a P<+> type GaAs base layer 14, an N-type AlGaAs emitter layer 15, and an N<+> type GaAs emitter contacting layer 16 are grown on the surface of a semi-insulating GaAs substrate 11. After a photoresist film is formed, a Ge film and an Mo film are formed, patterned, and emitter electrodes 17 are formed. With the electrodes 17 as masks the layer 16 is wet etched. A stepwise mesa etching is executed to expose the partial surface of the layer 12. A depositing method and a lifting-OFF method are, for example, applied to form a base electrode 20 and a collector electrode 21. |
