| 摘要 |
PURPOSE:To remove photo resist without giving damage on a silicon oxide film as the base layer and a silicon substrate by using a mixed gas of oxygen and Freon gas in the form of plasma and newly coating a photo resist film before exfoliation. CONSTITUTION:The surface of silicon oxide film 2 at the surface of a silicon substrate 1 is coated with photo resist and an impurity is ion implanted to the silicon substrate 1 with the photo resist film 3 on which pattern is formed used as the mask in order to form a selective diffusion layer 4. In this case, impurity 5 is implanted and the photo resist film which is not easily removed by the oxygen plasma is formed. The photo resist film 6 is newly formed by coating of photo resist. Thereafter, a mixed gas of oxygen gas and Freon gas of 5-10% is caused to flow into the processing chamber and these gases are applied under a low pressure at a high frequency. The silicon substrate to which the photo resist to be removed is adhered is input into the processing chamber of plasma exfoliation apparatus where the oxygen and Freon gases are existing in the form of plasma. Thereby, the photo resist layer 6 and photo resist layer 3 used as the mask can be removed. |
