| 摘要 |
PURPOSE:To suppress a bias effect of a substrate, and to execute completely and quickly charge and discharge of a capacity load by constituting a titled switch so that two MIS type transistors can be driven by one gate control signal source. CONSTITUTION:When a voltage of +V0 volt is impressed to a signal input terminal 15, and a positive gate voltage is impressed to each gate electrode 22 and 23, as for the second nMOS transistor 11, the first electrode 14 and the second electrode 17 operate as a drain electrode and a source electrode, respectively, and operate as a source follower, and a current charges a capacity element 21. When the signal input terminal 15 is varied to the ground potential, and the positive gate voltage is impressed again, as for the first nMOS transistor 10, the first electrode 12 and the second electrode 16 operate as the source electrode, and the source ground which becomes the drain electrode, respectively, and the charge which is accumulated in the capacity element 21 is discharged.
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