发明名称 MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PURPOSE:To remove the overhangs of a metal layer by forming a circular pattern and a doughnut-shaped pattern concentric with the pattern on a metal layer, etching the metal layer to expose the circular pattern, and selectively etching it. CONSTITUTION:After layers 2-5 are epitaxially grown on a substrate 1, an insulating film 7 is accumulated, a current implanting hole is formed. A P-type side electrode layer 8 and an N-type side electrode layer 10 are provided. Then, a doughnut-shaped ring having 180mum of inner diameter and 220mum of outer diameter is formed concentrically with the hole of approx. 100mum of diameter on the second main surface 11 by photolithography and chemical etching to expose the substrate 1. A hole of 100mum of diameter is matched to the center by photolithography on the above surface, and the substrate 1 of the portion is removed by etching. Then, a resist 12 is removed to eliminate the overhangs of a metal layer. Thus, a light producing surface 9 is completely enclosed by the resin molding to hardly store air bubbles.
申请公布号 JPS61187383(A) 申请公布日期 1986.08.21
申请号 JP19850027844 申请日期 1985.02.15
申请人 NEC CORP 发明人 MORIHISA YUZO
分类号 H01L33/14;H01L33/20;H01L33/30;H01L33/40;H01L33/52 主分类号 H01L33/14
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