发明名称 METHOD AND APPARATUS FOR INSPECTING FLAW OF CLOSE CONTACT TYPE IMAGE SENSOR
摘要 PURPOSE:To inspect the presence of the flaw of an indivisual electrode pattern within a short time, by a bright signal generated when a photodiode is irradiated with light. CONSTITUTION:A probe 10 is contacted with the connection pad relating to the photodiode of one block in such a state that the phtotdiode 2 of a sensor substrate 1 is irradiated with light. MOSFET switches 8 are successively turned ON by th shift register 7 of a drive circuit 6. Subsequently, when the switches 8 are turned OFF at a certain time and a charge accumulation time arrives, the photodiode 2 is discharged by the sum of a photocurrent and the leak current of the photodiode 2, After a definite time, the switches 8 are again turned ON and the re-charging current flowed in the photodiode 2 is detected by a detection circuit 9 to obtain a bright current. The flaw of the indivisual electrode pattern of one block of the substrate 1 can be inspected by said bright current and this inspection is successively performed with respect to the indivisual electrode pattern at every block and the inspection of all of the indivisual electrode patterns of th sensor substrate 1 is performed.
申请公布号 JPS61187672(A) 申请公布日期 1986.08.21
申请号 JP19850026414 申请日期 1985.02.15
申请人 NEC CORP 发明人 UCHIDA HIROYUKI
分类号 G01R31/26;H01L21/66;H01L27/14;H01L27/146 主分类号 G01R31/26
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