发明名称 THIN FILM ELECTROLUMINESCENCE STRUCTURE
摘要 Described herein is a thin film electroluminescence structure comprising a substrate layer (1), a first electrode layer (2), a second electrode layer (10) disposed at a distance from the first electrode layer (2), and a luminescence layer (6) disposed between the first (2) and the second electrode layer (10). Additional layer structures (3 to 5, 7 to 9) are disposed between the electrode layers (2 and 10) and the luminescence layer (6), said structures having current limiting and chemically protecting functions. The invention is based on the idea that it is possible to separate the functions of a chemical barrier and a current limitation from each other, whereby the production of the chemical protection in itself takes place without voltage losses, in other words, with a material whose electrical conductivity is essentially higher than the electrical conductivity of the current limiter. Hence, there is a layer (3, 8) functioning as a chemical barrier on both sides of the luminescence layer (6), whereas there is a current limiting layer only on one side, either as a separate resistive or dielectric layer (8), or as integrated in the material layer constituting the chemical barrier.
申请公布号 AU554467(B2) 申请公布日期 1986.08.21
申请号 AU19820080450 申请日期 1982.02.12
申请人 ELKOTRADE AG 发明人 JORMA OLAVI ANTSON;SVEN GUNNAR LINDFORS;ARTO JUHANI PAKKALA;JARMO SKARP;TUOMO SAKARI SUNTOLA;MARKKU YLILAMMI
分类号 H05B33/12;H05B33/22;(IPC1-7):H05B33/22;C09K11/57 主分类号 H05B33/12
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