发明名称 DRIVE METHOD OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent a large amount of current from flowing and the occurrence of a potential drop of a power source wire and that of a potential floating of a grounding wire by constituting in such a way that the entire circuit part of an I/O circuit will not be driven simultaneously. CONSTITUTION:Control signals are suquentially given in such a way that signals corresponding to a memory cell close to an X decoder 3 act earlier. Namely, control signals C11, C21 and C31 are outputted sequentially or simultaneously, which causes a sensor amplifier 51, a data amplifier 61 and a data-out buffer 71 to act in said order or simultaneously. Then control signals C12, C22 and C32 are outputted, and a sensor amplifier 52, a data amplifier 62 and a data-out buffer 72 are operated. Finally control signals C1n, C2n and C3n are outputted, and a sensor amplifier 5n, a data amplifier 6n and a data-out buffer 7n are acted.
申请公布号 JPS60231993(A) 申请公布日期 1985.11.18
申请号 JP19840088671 申请日期 1984.05.02
申请人 NIHON DENKI AISHII MAIKON SYSTEM KK 发明人 TAKAHASHI HIDEKI
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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