| 摘要 |
PURPOSE:To prevent the exfoliation defect of a semiconductor layer and thereby to improve a yield of a semiconductor device having a three-dimensional structure wherein a re-crystallized semiconductor layer on an insulating film is used, by applying energy beams onto the semiconductor layer while impressing a vertical magnetic field on the semiconductor layer formed on an insulator substrate. CONSTITUTION:When a silicon layer on an insulating film is re-crystallized, the temperature of a silicon substrate 1 is raised to about 450 deg.C, for instance. Then, in the state in which a magnetic field of 4,000 gausses, for instance, is impressed vertically on the surface of the silicon substrate 1, a polycrystalline silicon layer 3 is scanned in the direction of an arrow (m) by a laser beam L, so that the polycrystalline silicon layer be melted and re-crystallized sequentially. The scanning by the laser beam is conducted on the entire surface of the silicon substrate 1 in such a meandering manner as shown by the arrow (m), and a scanning pitch P is made narrower than the diameter D of a beam spot S so that the laser beam L be overlapping. |
