发明名称 MANUFACTURE OF COPPER ALLOY FOR SEMICONDUCTOR LEAD FRAME
摘要 PURPOSE:To obtain a Cu alloy for a semiconductor lead frame having high strength and toughness by casting a Cu alloy consisting of a specified amount of Ti and the balance Cu in an inert or reducing atmosphere, hot working it at a prescribed temp., and carrying out process annealing before finish rolling and final annealing under specified conditions. CONSTITUTION:A Cu alloy consisting of 0.01-2.0wt% Ti and the balance Cu is cast in an inert or reducing atmosphere, hot worked at 800-950 deg.C, and subjected repeatedly to rolling and annealing. At this time, process annealing before finish rolling is carried out at 400-600 deg.C for 30-120min, and final annealing is carried out at 200-450 deg.C. By this method, a Cu alloy having superior strength and toughness and suitable for use as a material for a lead frame can be obtd.
申请公布号 JPS61186459(A) 申请公布日期 1986.08.20
申请号 JP19850024880 申请日期 1985.02.12
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 ASAI MASATO;AKASAKA KIICHI;IWAI HIROHISA;SHINOZAKI SHIGEO
分类号 H01L23/50;C22F1/00;C22F1/08;H01L23/495 主分类号 H01L23/50
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