| 摘要 |
PURPOSE:To improve damp-proofing by forming a conductive film under the state of floating to the upper section of a surface protective insulating film in a semiconductor element section. CONSTITUTION:A polysilicon wiring 5 is arranged partially on an insulating film 2 shaped onto a substrate 1, the upper section of the wiring 5 is coated with an inter-layer insulating film 3, semiconductor elements 7 are formed onto the insulating film 3, and the whole is coated with a surface protective insulating film 4. A conductive film under the state of floating such as wiring aluminum 6 is shaped with the exception of sections in the vicinity of bonding wires 8. Accordingly, the wiring aluminum 6 offsets the defects of the surface protective insulating film 4 and prevents an intrusion to internal wirings of moisture, thus improving damp-proofing.
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