发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To increase driving capacity without lowering the degree of integration, and to prevent the deterioration of performance resulting from the deformation of a bonding-wire by mutually connecting external interface circuits and connecting the external interface circuits and a bonding-pad in a wiring region. CONSTITUTION:External interface circuit forming regions 6a-6d in which a plurality of interface circuits containing no bonding-pad, input-output cells CI/O, are aligned and formed are disposed around an internal circuit forming region 2 through first wiring regions 3. A second wiring region 7 having width in which wirings such as three ones can be arranged is shaped on the outside of the regions 6a-6d, and bonding-pads BP are disposed to a region surrounding the second wiring region 7 on the outside of the region 7, the whole peripheral section of a chip 1, at pitches such as uniform ones. In the gate array-chip, the bonding-pads BP arranged at the corner sections of the chip 1 and the desired input-output cells CI/O are connected by film wirings LA through a master slice method by using the second wiring region 7.
申请公布号 JPS61187249(A) 申请公布日期 1986.08.20
申请号 JP19850027001 申请日期 1985.02.14
申请人 FUJITSU LTD 发明人 SASAKI TAKESHI;MONMA HIDEO;NAGANUMA MASAYUKI
分类号 H01L21/82;H01L21/822;H01L27/04;H01L27/118 主分类号 H01L21/82
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