| 摘要 |
PURPOSE:To obtain the thin film of high quality, by applying the quartz double pipe for the introducing system, making the first gas flow in the inner pipe and the second gas flow in the outer pipe, and making them arrive at the surface of the silicon substrate after the two kinds of gas are decomposed or excited at the same time with microwave discharge before being introduced into the reaction chamber. CONSTITUTION:In the inner pipe 1 the mixed gas of silane and herium (SiH4/He=0.2) is made to flow and in the outer pipe 2 nitrogen gas is made to flow. Both of them discharge in the 2.45GHz microwave cavity before they are introduced into the reaction chamber 4. By vacuumizing the reaction chamber 4, the decomposition formation material and the excited species produced by the discharge are introduced into the reaction chamber 4 through the quartz double pipe, and arrive at the surface of the wafer 5 put on the wafer supporting stand 6. On the surface, the silicon nitride film is formed. The inside diameters of the quartz double pipe are varied according to the diameter of the wafer, and the gas quantity is varied according to the surface area of the wafer. Thus, the film formation is enabled independently of the wafer diameter. |
