| 摘要 |
PURPOSE:To narrow the width of element isolation, and to increase density by forming a second groove while holding an element isolation region shaped to a first groove in a semiconductor substrate, shaping a thin insulating film on the surface of the substrate in the inner wall of the second groove and filling polycrystalline silicon to form a capacitor. CONSTITUTION:An silicon dioxide film 15 is shaped to a substrate 1 and the opening of an element isolation region 16 is bored, a groove 17 is formed through reactive ion etching while using the silicon dioxide film 15 as a mask, and ions are implanted to a bottom section to shape a channel stopper region 3. An silicon dioxide film 18 is formed, phosphorus-doped polycrystalline silicon 19 is buried into the residual groove, a groove 20 is shaped while employing the silicon dioxide film 15 as a mask, an N<+> diffusion layer 6 is formed on the substrate side, and the silicon dioxide film 15 is removed. An insulating film 6 for a MOS capacitor is shaped, and polycrystalline silicon 7 is deposited. A pattern for the electrode 7 is formed, gate oxide films 8, inter-layer oxide films 9, gate electrodes 10 and source-drain 11 are shaped, an inter-layer film 12 is deposited, electrode extracting ports 13 are bored, an electrode 14 is formed, and a protective film is deposited. |
