| 摘要 |
PURPOSE:To strengthen the controllability of etching in the exposure of semiconductor substrates and prevent the characteristics deterioration of electric devices by firstly growing the second material different from the first material which forms a semiconductor substrate and then growing material forming a photoelectric device. CONSTITUTION:Layers forming a photosensitive device 19, those of InxGa1-xAsyP1-y layer 12, N-type InP layer 13 and N-type InxGa1-xAs layer 14 are easily laminated by the liquid-phase epitaxial growth method. The InxGa1-xAsyP1-y layer 12, playing no role as a photosensitive device, has a preferable influence on the controllability of etching and the prevention of etchpits appearing on the semiconducting InP substrate 11 on which an electric device 18 will be fabricated. Thus, in providing an InxGa1-xAsyP1-y layer 12, it is hardly etched with an etching solution containing hydrochloric acid and phosphoric acid which etches the N-type InP layer 11, and the InP substrate 11 is also hardly etched with an etching solution containing sulphuric acid and hydroperoxide which etches the InxGa1-xAsyP1-y layer 12. |
