| 摘要 |
PURPOSE:To intercept the attaching of generated ions to the inner wall of a gas chamber by a method wherein a plurality of metallic gas chambers are connected, where a semiconductor substrate is carried, and in the lamination of semiconductor thin films of different quality on the substrate meatime by glow discharge, each gas chamber is provided with not only discharge electrodes, but also ion control electrodes. CONSTITUTION:The gas chambers 2, 3, and 4 are sandwiched by a preheating chamber 1 and a cooling chamber 5. SiH4+CH4+B2H6+H2 gas is fed into the gas chamber 2, SiH4 gas into the gas chamber 3, and SiH4+PH3+H2 gas into the gas chamber 4. In such a manner, the semiconductor substrate P is carried from the pre-heating chamber 1 to the cooling chamber 5, and products obtained by respective gas components are laminated on the substrate P during passage through the chambers 2-4. For this purpose, each chamber 2-4 is provided with opposite electrodes 9 and 9', 10 and 10', and 11 and 11' connected to discharge power sources 13a-13c respectively. In addition, ion inhibition electrodes 12-12'' connected to ion inhibition electrodes 14a-14c are provided between those electrodes. Thus, ion attaching to the side wall of the gas chamber is intercepted. |
