发明名称 |
Improvements to pulling processes and equipment for growing silicon crystals having high and controlled carbon content. |
摘要 |
<p>Silicon crystals with high and controlled carbon content can be grown by controlling the oxygen leakage during the melting in standard Czochralski silicon crystal pullers.</p><p>Carbon concentration profile of grown crystals can be deduced from the carbon monoxide concentration [CO] real time monitoring, through its integral taken during the whole pulling duration.</p> |
申请公布号 |
EP0191111(A1) |
申请公布日期 |
1986.08.20 |
申请号 |
EP19840430048 |
申请日期 |
1984.12.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;COMPAGNIE IBM FRANCE |
发明人 |
CARLE, JEAN-FRANCOIS;PHILIPPOT, PATRICK |
分类号 |
C30B15/00;C30B15/04;C30B29/06;H01L21/18;H01L21/208;(IPC1-7):C30B15/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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