| 摘要 |
<p>PURPOSE:To show clearly memory content by providing an output control transistor (TR) which is in continuity state when the 1st level signal from a detection circuit and is in noncontinuity state when the 2nd level signal is re ceived to an output circuit of a sense amplifier. CONSTITUTION:An output circuit 19 of a sense amplifier 15 of a semiconductor memory device is provided with an output control TR11 which is in continuity state when the 1st level signal is received and is in noncontinuity state when the 2nd level signal is received. Then the TR11 is conductive to decrease the combined resistance between the 1st potential point 3 and a grounding potential point when a level shift TR18 is conductive, provided in parallel with a circuit 4 including a memory TR1 between the 1st potential point 3 and the grounding point so that the potential of L level outputted to the output line is made lower than the potential of the L level outputted to the output with the memory TR only at the continuity state, thereby indicating clearly the contact of logical 0/1 stored in the memory TR onto the output line even if nose is produced.</p> |
