| 摘要 |
PURPOSE:To contrive to enable the precision of the resistance ratio among the plural resistances to improve in the titled device by a method wherein the device is constituted of the plural insular regions consisting of a semiconductor layer and the resistance regions, which are respectively provided in each of the insular regions and have an inverse conductive type to the conductive type of the insular regions, and the voltages, which are impressed between the respective pairs of the insular regions and the resistance regions, are individually made a variable control. CONSTITUTION:Transistors Q1 and Q2 are respectively formed in insular regions 1 and 2, bias voltage VB is impressed on the respective bases B1 and B2 of the transistors Q1 and Q2 through a metal M1 for wiring and the respective collectors C1 and C2 of the transistors Q1 and Q2 are respectively connected to other circuits such as the analog switches and so forth in a current addition type D/A converter through metals M2 and M3 for wiring. An N-pole high-concentration region 17 is selectively provided in an insular region 5 and an electrode 7 for inverse bias is led out from the region 17. When inverse bias voltage is impressed on the electrode 7 for inverse bias, a P-type impurity region 11 and a depletion layer 18 in a thickness equivalent to the value of the inverse bias voltage are formed. As this semiconductor resistance device is made in the constitution, wherein the voltages to be impressed among the respective pairs of the insular regions and the resistance regions are individually made a variable control, the fine regulation of the resistivity thereof becomes possible. As a result, the precision of the resistance ratio of the plural resistances can be sufficiently improved. |
