| 摘要 |
PURPOSE:To enable to increase drain current and to operate the circuit at a high speed, by positioning the region doped with impurities having a density per unit area exceeding the channel change density, at the channel section spaced from the source and drain of the transistor. CONSTITUTION:The region doped with impurities having a density per unit area exceeding the channel charge density, is positioned at the channel section spaced from the source and drain of the transistor. Under a steady state, Tc= Tx+tauI<2>/N<2>gmu, when a constant current I flows from QI=QX, wherein N is charge density in the channel plane of the field effect transistor, E electric field in the direction of current, mu charge mobility, Tc charge temperature, Tx crystal temperature, g unit charge, tau time constant for heat of charges to transfer to the crystal. From this expression, it is understood that the temperature rises less, the larger N. Moreover, the charge density is sufficiently high at both sides, and there exists a region with a length of L where the charge temperature does not rise, becoming L<0.2mum. The high conductive charge regions 8 are formed by ion-implanting arsenic in an N-channel transistor, or boron in a P-type transistor. Thus a field effect transistor can be provided reliably. |
