| 摘要 |
PURPOSE:To form a film having a large area, to improve the productivity of the film as well as to contrive accomplishment of mass production by a method wherein an activating seed grown by decomposing a compound containing silicon and halogen and an activating seed grown by a compound containing silicon are introduced into a film forming vacant space, and optical energy is made to work on the above-mentioned activating seeds. CONSTITUTION:Under the state of coexistence of the activating seed A formed by decomposing the compound containing silicon and halogen and the activating seed B formed by a silicon containing compound in a film forming vacant space, the adverse effect generated by the action of etching or the abnormal discharge action and the like, for example, while the film is being formed can be prevented by having optical energy worked on the above-mentioned materials, instead of growing plasma. Also, film-forming speed can be increased remarkably, and the substrate temperature when a deposition film is formed can be lowered by using the activating seed activated in the vacant space different from the film-forming vacant space, thereby enabling to industrially mass produce the deposition film of stabilized film quality at low cost. |
